What property does Bismuth Telluride have?

Bismuth telluride The molecular formula of the powder is Bi2Te3. Bismuth telluride, an indirect band gap semiconductor, has a bandgap of 0.145eV at room temperature, electron mobility of 0.135m2/(V*s) and hole mobility 4.4×10-2m2/ (V*s), and thermoelectric quality coefficient 1.6×10-3/K.
Bismuth Telluride is a dense material with a density 7.8587g/cm3 at a melting temperature of 585degC. It is bound with covalent and ionic bonds. Bismuth telluride exhibits the characteristics of a ‘topological insulator’, allowing electrons on its surface to move freely without losing energy.

Bismuth Telluride is prepared by the Bridgman Method, Zone Smelting Method, and Czochralski Method. Bismuth telluride, a semiconductor, has a good electrical conductivity and mediocre thermal conductivity.

How is Bismuth Teluride used?

Bismuth-telluride-based semiconductors have high performance thermoelectric conversion in the low- and mid-temperature range. These materials are widely used to control temperature and for local refrigeration in microelectronics. The applications of these devices are excellent in thermoelectric power generation and industrial waste heat recovery.

Through alloying, phonons scattering can improve to reduce thermal conductivity and carrier concentration to optimize the electrical performance. This will enhance the thermoelectric performance.

The dangers of ingesting large amounts of bismuth-telluride are low but it can still be fatal. The material is able to allow electrons on its surface to move at room temperatures without consuming energy, which can lead a significant increase in the operating speeds of computer chips.

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